isocom components ltd unit 25b, park view road west, park view industrial estate, brenda road hartlepool, cleveland, ts25 1yd tel: (01429) 863609 fax :(01429) 863581 db92010-aas/a4 approvals l ul recognised, file no. e91231 'x' specification approvals l l vde 0884 in 2 available lead forms : - - std - g form description the h11c_ series are optically coupled isolators consisting of infrared light emitting diode and a light activated silicon controlled rectifier in a standard 6pin dual in line plastic package. features l options :- 10mm lead spread - add g after part no. surface mount - add sm after part no. tape&reel - add smt&r after part no. l high isolation voltage (5.3kv rms ,7.5kv pk ) l high surge anode current (5.0 a) l high blocking voltage (200v* 1 , 400v* 1 ) l low turn on current (5ma typical) l all electrical parameters 100% tested l custom electrical selections available applications l 10a, t 2 l compatible, solid state relay l 25w logic indicator lamp driver l 400v symmetrical transistor coupler h11c1x, H11C2x, h11c3x, h11c4x, h11c5x, h11c6x h11c1, H11C2, h11c3, h11c4, h11c5, h11c6 photon coupled isolator ga as infrared emitting diode & light activated scr absolute maximum ratings (25c unless otherwise specified) storage temperature -55c to + 150c operating temperature -55c to + 100c lead soldering temperature (1/16 inch (1.6mm) from case for 10 secs) 260c input diode forward current 60ma forward current (peak) (1 m s pulse, 300 pps) 3a reverse voltage 6v power dissipation 100mw detector peak forward voltage h11c1, H11C2, h11c3 200v* 1 h11c4, h11c5, h11c6 400v* 1 peak reverse gate voltage 6v rms on-state current 300ma peak on-state current (100 m s, 1% duty cycle) 10a surge current (10ms) 5a power dissipation 300mw *1 important : a resistor must be connected between gate and cathode (pins 4 & 6) to prevent false firing (r gk < 56k w ) 1 3 4 6 2 5 dimensions in mm 2.54 7.0 6.0 7.62 max. 0.5 min. 3.9 3.1 5.1 max. 15 max 0.25 0.48 8.3 max. option g 8.3 max surface mount option sm 10.16 10.2 9.5 0.26 1.2 0.6 1.4 0.9 5/12/00 isocom inc 1024 s. greenville ave, suite 240, allen, tx 75002 usa tel: (214) 495-0755 fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com
db92010-aas/a4 parameter min typ max units test condition input forward voltage (v f ) 1.2 1.5 v i f = 10ma reverse voltage (v r ) 3 v i r = 10 m a output peak off-state voltage (v dm ) (note 2) h11c1, H11C2, h11c3 200 v r gk =10k w, i d = 50m a, t a = 100c h11c4, h11c5, h11c6 400 v r gk =10k w, i d = 150m a, t a =100c peak reverse voltage (v rm ) h11c1, H11C2, h11c3 200 v r gk =10k w, i d = 50m a, t a =100c h11c4, h11c5, h11c6 400 v r gk =10k w, i d = 150m a, t a =100c on-state voltage (v tm ) 1.1 1.3 v i tm = 300ma off-state current (i dm ) h11c1, H11C2, h11c3 50 m a r gk =10k w, i f = 0 , v dm =200v, t a =100c h11c4, h11c5, h11c6 150 m a r gk =10k w, i f = 0 , v dm =400v, t a =100c reverse current (i r ) h11c1, H11C2, h11c3 50 m a r gk =10k w, i f = 0 , v dm =200v, t a =100c h11c4, h11c5, h11c6 150 m a r gk =10k w, i f = 0 , v dm =400v, t a =100c coupled input current to trigger ( i ft ) (note 2) h11c1, H11C2, h11c4, h11c5 20 ma v ak =50v, r gk =10k w h11c3, h11c6 30 ma v ak =50v, r gk =10k w h11c1, H11C2, h11c4, h11c5 11 ma v ak =100v, r gk =27k w h11c3, h11c6 14 ma v ak =100v, r gk =27k w coupled dv/dt, input to output (dv/dt) 500 v/ m s input to output isolation voltage v iso 5300 v rms see note 1 7500 v pk see note 1 input-output isolation resistance r iso 10 11 w v io = 500v (note 1) input-output capacitance cf 2 pf v = 0, f =1mhz electrical characteristics ( t a = 25c unless otherwise noted ) note 1 measured with input leads shorted together and output leads shorted together. note 2 special selections are available on request. please consult the factory. 5/12/00
db92010-aas/a4 0 0.5 1 1.5 2 2.5 3 forward voltage v f ( v ) input current to trigger vs. ambient temperature 1 2 4 6 10 20 40 60 100 200 400 1000 pulse width ( m s ) forward current i f (ma) input characteristics i f vs. v f normalized input current to trigger i ft 0 10 20 30 40 50 60 70 80 90 100 input current i f (ma) turn on time t on ( m s) turn on time vs. input current 0.1 0.1 0.2 anode to cathode voltage v ak ( v ) input current to trigger vs. anode to cathode voltage normalized input current to trigger i ft 0.1 0.2 1 5 10 50 100 200 0.4 1.0 2 4 10 20 40 100 normalized to v ak = 50v r gk =10k w t a = 25 c r gk =300 w 10k w 27k w 56k w 1k w r gk =300 w 10k w 27k w 56k w 1k w normalized to v ak = 50v, r gk =10k w, t a = 25 c -60 -40 -20 0 20 40 60 80 100 120 ambient temperature t a ( c ) normalized input current to trigger i ft 0.1 0.2 0.4 1.0 2 4 10 12 input current to trigger distribution vs. ambient temperature ambient temperature t a ( c ) -40 -20 0 20 40 60 80 100 normalized to v ak = 50v r gk =10k w t a = 25 c 90th percentile 10th percentile input current to trigger vs. pulse width normalized to v ak = 50v r gk =10k w t a = 25 c r gk =300 w 1k w 10k w 27k w 56k w normalized input current to trigger i ft 0.2 0.4 1 2 4 10 20 40 100 0.1 0.4 1 2 4 10 4 6 8 10 12 14 0 16 18 20 22 24 2 v ak = 50v t on = t d + t r t r = 1 m s r gk =1k w 10k w 56k w 0.2 0.4 1 2 4 10 20 40 100 100c -55c 25c 5/12/00
db92010-aas/a4 0 1 2 3 4 on state voltage v t ( v ) maximum transient thermal impedence 0 0.2 0.4 0.6 0.8 1.0 on state current ( a ) on state current i t (a) on state characteristics normalized forward current off state ( i d ) 25 50 75 100 critical rate of rise applied forward voltage dv/dt (v/ m s) dv/dt vs. ambient temperature holding current vs. ambient temperature holding current i h ( m a) 10 normalized to v ak = 50v r gk =10k w t a = 25 c r gk =300 w 10k w 27k w 56k w 1k w 0.001 0.01 0.1 1 2 4 10 100 time (seconds) transient thermal impedance ( c / watt ) off state forward current vs. ambient temperature ambient temperature t a ( c ) 0 25 50 75 100 normalized to v ak = 50v t a = 25 c on state current vs. maximum allowable temperature maximum allowable temperature ( c ) 10 100 0 1 2 4 10 20 40 100 200 400 2000 1000 4000 10000 -60 -40 -20 0 20 40 60 80 100 120 ambient temperature t a ( c ) 1. lead temperature measured at the widest portion of the scr anode lead. 2. ambient temperature measured at a point 1/2" from the device . junction to lead junction to ambient 1 2 4 10 20 40 100 200 400 1000 v ak = 400v v ak = 50v 20 40 100 200 400 1000 4000 10000 2000 v ak = 200v 1. ambient temp. half-sine wave avg 2. ambient temp. dc current 3. anode lead temp. half-sine wave avg 4. anode lead temp. dc current 1. 2. 4. 3. 20 30 40 50 60 70 80 90 r gk =300 w 10k w 27k w 56k w 1k w 0.1 1 10 40 100 4 0.4 400 1000 ambient temperature t a ( c ) junction temperature = 25c junction temperature = 100c increases to forward breakover voltage 0.01 0.02 0.04 0.1 0.2 0.4 1 2 5/12/00
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